Part Number Hot Search : 
C847B A114Y C3148 W25X40BV C8051F2 V375C FAN5401 SMB5932B
Product Description
Full Text Search
 

To Download NTSJ20120CTG Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  ? semiconductor components industries, llc, 2013 january, 2013 ? rev. 4 1 publication order number: ntst20120ct/d ntst20120ct, NTSJ20120CTG, ntsb20120ct-1g, ntsb20120ctg, ntsb20120ctt4g very low forward voltage trench-based schottky rectifier exceptionally low v f = 0.54 v at i f = 5 a features ? fine lithography trench ? based schottky technology for very low forward voltage and low leakage ? fast switching with exceptional temperature stability ? low power loss and lower operating temperature ? higher efficiency for achieving regulatory compliance ? low thermal resistance ? high surge capability ? pb ? free and halide ? free packages are available typical applications ? switching power supplies including notebook / netbook adapters, atx and flat panel display ? high frequency and dc ? dc converters ? freewheeling and or ? ing diodes ? reverse battery protection ? instrumentation mechanical characteristics ? case: epoxy, molded ? epoxy meets flammability rating ul 94 ? 0 @ 0.125 in ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c maximum for 10 sec to ? 220ab case 221a style 6 3 4 1 very low forward voltage, low leakage schottky barrier rectifiers 20 amperes, 120 volts 1 3 2, 4 2 http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information pin connections 3 4 1 2 i2pak case 418d style 3 to ? 220fp case 221ah 3 4 1 2 d2pak case 418b
ntst20120ct, NTSJ20120CTG, ntsb20120ct ? 1g, ntsb20120ctg, ntsb20120ctt4g http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 120 v average rectified forward current (rated v r , t c = 130 c) per device per diode i f(av) 20 10 a peak repetitive forward current (rated v r , square wave, 20 khz, t c = 135 c) per device per diode i frm 40 20 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 120 a operating junction temperature t j ? 40 to +150 c storage temperature t stg ? 40 to +150 c voltage rate of change (rated v r ) dv/dt 10,000 v/  s stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. thermal characteristics rating symbol ntst20120ctg ntsb20120ct ? 1g ntsb20120ctg NTSJ20120CTG unit maximum thermal resistance per diode junction ? to ? case junction ? to ? ambient r  jc r  ja 2.5 70 1.43 46.8 4.42 105 c/w c/w electrical characteristics (per leg unless otherwise noted) rating symbol typ max unit maximum instantaneous forward voltage (note 1) (i f = 5 a, t j = 25 c) (i f = 10 a, t j = 25 c) (i f = 5 a, t j = 125 c) (i f = 10 a, t j = 125 c) v f 0.62 0.90 0.54 0.64 ? 1.10 ? 0.72 v maximum instantaneous reverse current (note 1) (v r = 90 v, t j = 25 c) (v r = 90 v, t j = 125 c) (rated dc voltage, t j = 25 c) (rated dc voltage, t j = 125 c) i r 12 6 ? 17 ? ? 700 100  a ma  a ma 1. pulse test: pulse width = 300  s, duty cycle  2.0%
ntst20120ct, NTSJ20120CTG, ntsb20120ct ? 1g, ntsb20120ctg, ntsb20120ctt4g http://onsemi.com 3 typical characterisitics figure 1. typical instantaneous forward characteristics figure 2. typical reverse current characteristics figure 3. typical junction capacitance v f , instantaneous forward voltage (v) 100 1.0 0.1 20 v r , instantaneous reverse voltage (v) 0.001 i f , instantaneous forward current (a) i 0.6 0.8 1.0 40 60 0 0.2 0.4 80 t a = 25 c t a = 125 c t a = 150 c 0.01 0.1 1.0 10 100 , instantaneous reverse current (ma) r 1.2 120 0.1 v r , reverse voltage (v) 10000 1000 10 110 100 10 30 50 70 90 c j , junction capacitance (pf) figure 4. current derating per leg 0 5 10 15 20 0 20 40 60 80 100 120 140 t c , case temperature ( c) square wave dc r  jc = 1.3 c/w i f(av) , average forward current (a) figure 5. current derating 0 5 10 15 20 25 30 35 40 0 20 40 60 80 100 120 140 t c , case temperature ( c) square wave dc r  jc = 1.3 c/w i f(av) , average forward current (a) figure 6. forward power dissipation 0 5 10 15 20 25 30 0 2 10 12 14 i f(av) , average forward current (a) p f(av) , average forward power dissipation (w) square wave dc t j = 150 c i pk /i av = 5 i pk /i av = 10 i pk /i av = 20 468 1.4 1.6 1.8 100 110 100 t j = 25 c t a = 25 c t a = 125 c t a = 150 c
ntst20120ct, NTSJ20120CTG, ntsb20120ct ? 1g, ntsb20120ctg, ntsb20120ctt4g http://onsemi.com 4 typical characterisitics 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10% 5% 2% 20% 1% 50% duty cycle single pulse t, pulse time (sec) r(t), typical transient thermal resistance ( c/w) figure 7. typical transient thermal response for ntst20120ct and ntsb20120ct ? 1g 10% 5% 2% 20% 1% 50% duty cycle single pulse t, pulse time (sec) r(t), typical transient thermal resistance ( c/w) 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 figure 8. typical transient thermal response for NTSJ20120CTG 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10% 5% 2% 20% 1% 50% duty cycle single pulse t, pulse time (sec) r(t), typical transient thermal resistance ( c/w) figure 9. typical transient thermal response for ntsb20120ctg
ntst20120ct, NTSJ20120CTG, ntsb20120ct ? 1g, ntsb20120ctg, ntsb20120ctt4g http://onsemi.com 5 ordering information device package shipping ntst20120ctg to ? 220ab (pb ? free) 50 units / rail NTSJ20120CTG to ? 220fp (halide ? free) 50 units / rail ntsb20120ct ? 1g i 2 pak (pb ? free) 50 units / rail ntsb20120ctg d 2 pak (pb ? free) 50 units / rail ntsb20120ctt4g d 2 pak (pb ? free) 800 / tape & reel marking diagrams ayww ts20120cg aka a = assembly location y = year ww = work week aka = polarity designator x = g or h g = pb ? free package h = halide ? free package ayww ts20120cg aka ayww ts20120cg aka ayww ts20120cx aka to ? 220ab to ? 220fp i 2 pak d 2 pak
ntst20120ct, NTSJ20120CTG, ntsb20120ct ? 1g, ntsb20120ctg, ntsb20120ctt4g http://onsemi.com 6 package dimensions to ? 220 case 221a ? 09 issue af notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j style 6: pin 1. anode 2. cathode 3. anode 4. cathode to ? 220 fullpack, 3 ? lead case 221ah issue b dim min max millimeters d 14.70 15.30 e 9.70 10.30 a 4.30 4.70 b 0.54 0.84 p 3.00 3.40 e l1 --- 2.80 c 0.49 0.79 l 12.70 14.73 b2 1.10 1.40 q 2.80 3.20 a2 2.50 2.70 a1 2.50 2.90 h1 6.70 7.10 e q l1 b2 e d l p 123 4 b seating plane a a1 h1 a2 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. contour uncontrolled in this area. 4. dimensions d and e do not include mold flash and gate protrusions. mold flash and gate protrusions not to exceed 0.13 per side. these dimensions are to be measured at outermost extreme of the plastic body. 5. dimension b2 does not include dambar protrusion. lead width including protrusion shall not exceed 2.00. 2.54 bsc m 0.14 m a a b c e/2 m 0.25 m a b 3x c 3x b note 3
ntst20120ct, NTSJ20120CTG, ntsb20120ct ? 1g, ntsb20120ctg, ntsb20120ctt4g http://onsemi.com 7 package dimensions d 2 pak 3 case 418b ? 04 issue k seating plane s g d ? t ? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ? b ? m b w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b ? 01 thru 418b ? 03 obsolete, new standard 418b ? 04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f m l f m l f variable configuration zone r n p u view w ? w view w ? w view w ? w 123
ntst20120ct, NTSJ20120CTG, ntsb20120ct ? 1g, ntsb20120ctg, ntsb20120ctt4g http://onsemi.com 8 package dimensions i 2 pak (to ? 262) case 418d issue d style 3: pin 1. anode 2. cathode 3. anode 4. cathode notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. ? t ? w g k a c e v j h 123 4 seating plane d 3 pl dim min max min max millimeters inches a 0.335 0.380 8.51 9.65 b 0.380 0.406 9.65 10.31 c 0.160 0.185 4.06 4.70 d 0.026 0.035 0.66 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.094 0.110 2.39 2.79 j 0.013 0.025 0.33 0.64 s 0.390 ref 9.90 ref v 0.045 0.070 1.14 1.78 w 0.522 0.551 13.25 14.00 ? b ? m b m 0.13 (0.005) t s f f 0.122 ref 3.10 ref k 0.500 0.562 12.70 14.27 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ntst20120ct/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative


▲Up To Search▲   

 
Price & Availability of NTSJ20120CTG

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X